The total ionizing dose (TID) effect is a problematic concern in fully depleted silicon-on-insulator (FD-SOI) metal-oxide-semiconductor transistors (MOSFETs) because of the introduction of the thin buried oxide layer. The device performance is degraded by the radiation-induced trapped charges in the oxide. which cause threshold-voltage drifts and OFF-state leakage-current increments. ... https://www.miamistares.shop/product-category/mirror-products/